In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 32, No. 5B ( 1993-05-01), p. L742-
Kurzfassung:
We describe the electrical properties of GaAs overgrown by molecular beam epitaxy on 100 kV Ga + ion implanted substrates. Room-temperature carrier mobilities of the overgrown layers maintain good values for Ga doses up to 10 14 /cm 2 . With increasing Ga dose, the conductances of the overgrown layers shows a significant reduction, which is attributed to carrier depletion caused by ionized deep acceptors in the Ga-implanted layer. This effect can be almost entirely screened out when GaAs layers are overgrown directly on Ga-implanted semi-insulating substrates.
Materialart:
Online-Ressource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.32.L742
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
1993
ZDB Id:
218223-3
ZDB Id:
797294-5
ZDB Id:
2006801-3
ZDB Id:
797295-7
