In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 33, No. 4S ( 1994-04-01), p. 2133-
Abstract:
A 10–100 µ s modulated electron cyclotron resonance (ECR) plasma is discharged to control the generation of reactive species in high-density, low-pressure plasma. The density ratio of CF 2 radicals to F atoms in the CHF 3 plasma correlates well with the pulse duration. This is because the generation of reactive species in the ECR plasma depends on time (10–100 µ s). Moreover, we found that a collimated ion flux was generated in the pulsed plasma. This method achieves a high ratio of SiO 2 etching selectivity to Si etching and eliminates microloading effects during SiO 2 contact hole etching.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.33.2133
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1994
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7