In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 33, No. 4S ( 1994-04-01), p. 2276-
Abstract:
Interfacial defects related to the residual carbon on the hydrogenterminated Si(100) surface have been studied using the deep-level transient spectroscopy (DLTS) technique. The defect level is found to be donorlike which compensates the acceptor impurity at the interface. With a fast load-in and a two-step annealing, the defect density can be suppressed below the DLTS detection limit of 10 12 cm -3 .
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.33.2276
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1994
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7