In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 33, No. 4S ( 1994-04-01), p. 2311-
Abstract:
Using reflection-high-energy-electron diffraction (RHEED), the temperature dependence of Ge surface segregation during silicon gas source molecular beam epitaxy (Si-GSMBE) from hydride sources was studied, and it was found that surface hydrogen, which is produced by the dissociation of Si 2 H 6 and GeH 4 on the growing surface, may act as a growth-controlling surfactant. Comparison with results from solid source growth results suggests that hydrogen significantly suppresses the Ge segregation. Segregation kinetics were examined through simulation studies and the results indicate that the addition of surface hydrogen to the system inhibits segregation due to a lowering of the Gibbs heat of segregation.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.33.2311
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1994
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7