In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 33, No. 5R ( 1994-05-01), p. 2699-
Kurzfassung:
The effects of post-deposition annealing on the microstructure of tantalum oxide ( Ta 2 O 5 ) deposited on Si are evaluated by means of X-ray photoelectron spectroscopy. With the peak decomposition technique and the angle-resolved X-ray photoelectron spectroscopy (ARXPS) method we found that there is SiO 2 layer and Ta suboxide at the interface. By using a simple two-layer model, the thickness of both the Ta 2 O 5 layer and the interfacial SiO 2 layer could be evaluated. Investigating Ta 2 O 5 films this way before and after annealing revealed that annealing has the following effects on the interfacial reaction. With post-deposition annealing under O 2 , Ar, or N 2 gas, the Si substrate is oxidized by oxygen from the Ta 2 O 5 layer. The Ta 2 O 5 is partly reduced and N 2 gas activates this reaction. The thickness of the interfacial SiO 2 layer is reduced by nitridation of the Si substrate.
Materialart:
Online-Ressource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.33.2699
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
1994
ZDB Id:
218223-3
ZDB Id:
797294-5
ZDB Id:
2006801-3
ZDB Id:
797295-7
