In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 33, No. 5R ( 1994-05-01), p. 2699-
Abstract:
The effects of post-deposition annealing on the microstructure of tantalum oxide ( Ta 2 O 5 ) deposited on Si are evaluated by means of X-ray photoelectron spectroscopy. With the peak decomposition technique and the angle-resolved X-ray photoelectron spectroscopy (ARXPS) method we found that there is SiO 2 layer and Ta suboxide at the interface. By using a simple two-layer model, the thickness of both the Ta 2 O 5 layer and the interfacial SiO 2 layer could be evaluated. Investigating Ta 2 O 5 films this way before and after annealing revealed that annealing has the following effects on the interfacial reaction. With post-deposition annealing under O 2 , Ar, or N 2 gas, the Si substrate is oxidized by oxygen from the Ta 2 O 5 layer. The Ta 2 O 5 is partly reduced and N 2 gas activates this reaction. The thickness of the interfacial SiO 2 layer is reduced by nitridation of the Si substrate.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.33.2699
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1994
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
