In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 33, No. 7S ( 1994-07-01), p. 4320-
Abstract:
The absolute densities of Si, SiH and SiH 3 radicals in the electron cyclotron resonance (ECR) SiH 4 /H 2 plasma were measured as a function of microwave power and total pressure, using infrared diode laser absorption spectroscopy (IRLAS) and ultraviolet absorption spectroscopy (UVAS). Si, SiH and SiH 3 radical densities in the SiH 4 (50%)/H 2 ECR plasma were 3.6×10 9 , approximately 1×10 9 and 1.7×10 10 cm -3 , respectively, at the microwave power of 400 W and the total pressure of 1.3 Pa. The comparison between these radical densities in the ECR SiH 4 /H 2 plasma and those in the RF SiH 4 /H 2 plasma is discussed.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.33.4320
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1994
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7