In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 33, No. 9R ( 1994-09-01), p. 5107-
Kurzfassung:
Anomalous temperature dependence previously observed in the neutron diffraction intensity of silicon single crystals has been re-examined. Single-crystal specimens in a special form are used in order to separate intensity contributions from two regions, with and without stresses. It is found that a stressed crystal shows an intensity increase with a broad peak around 200 K, while a stress-free one shows no anomaly.
Materialart:
Online-Ressource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.33.5107
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
1994
ZDB Id:
218223-3
ZDB Id:
797294-5
ZDB Id:
2006801-3
ZDB Id:
797295-7