In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 33, No. 9S ( 1994-09-01), p. 5301-
Abstract:
Fabrication of ferroelectric Bi 4 Ti 3 O 12 thin films was carried out by dipping pyrolysis of metal naphthenates. Single-phase Bi 4 Ti 3 O 12 thin films with c -axis orientation perpendicular to the substrate surface were fabricated on Pt plates. They exhibited good ferroelectric properties: coercive field of 7.7 kV/cm and remanent polarization of 8.2 µ C/cm 2 . For the films fabricated on Pt/Ti/ SiO 2 /Si substrates, however, the Bi 2 Ti 2 O 7 phase mainly grew because of Ti diffusion into the bismuth titanate layer during the heat treatment. Fine micropatterns with linewidth of less than 1 µ m in precursors of Bi 4 Ti 3 O 12 were formed by spin-coating, irradiation with an electron beam and development. They were crystallized into the Bi 4 Ti 3 O 12 phase by successive pyrolysis and annealing. The reaction between the metal naphthenate films and energized electrons was studied by IR spectroscopic analysis.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.33.5301
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1994
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7