In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 33, No. 10R ( 1994-10-01), p. 5967-
Kurzfassung:
The CH 3 radical density and the deposition rate of carbon
thin film were measured under the same conditions in RF-discharge CH 4 and
CH 4 /rare gas plasmas. The behavior of the CH 3 radical density showed a similar tendency as the deposition rate
of carbon thin film as a function of power and CH 4 pressure
in CH 4 plasma. In CH 4 /Xe plasma, where a selective formation mechanism
increases the CH 3 radical density with increasing Xe dilution whereas other
CH x radicals are expected to decrease, the carbon deposition rate
increased with increasing Xe dilution. These results strongly suggest that the CH 3 radical is the dominant precursor in the film formation.
The increase of film formation rate in CH 4 /Xe plasma was slower than
that of the CH 3 radical density with increasing Xe dilution. This could
be attributed to the sputtering of the film by heavy Xe ions. In CH 4 /He plasma, where the effect of sputtering is expected to be small,
the film deposition rate and the CH 3 density varied in a much more
similar manner.
Materialart:
Online-Ressource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.33.5967
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
1994
ZDB Id:
218223-3
ZDB Id:
797294-5
ZDB Id:
2006801-3
ZDB Id:
797295-7
