In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 33, No. 1S ( 1994-01-01), p. 672-
Abstract:
The effect of the silicidation reaction between the sputtered titanium film and underlying polysilicon on the gate oxide integrity in the Ti-polycide gate was studied. The gate oxide breakdown failure increased with increasing silicidation temperature for both cases of 1-step and 2-step silicidation processes. This is related to increased amount of Ti diffusion from Ti-silicide to the gate oxide. However, for 1-step silicidation process reliability of the gate oxide for 750° C silicidation is better than for 650° C silicidation. This is because of the formation of the metastable C49 structure when solid-state reaction between the sputtered titanium film and underlying polysilicon occurs. Therefore, to obtain better reliablility of the Ti-polycide gate low temperature silicidatlon and the stable C54 phase are essential.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1994
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
