In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 33, No. 12S ( 1994-12-01), p. 6953-
Abstract:
Electron beam (EB) direct writing is expected to play an important role in the
field of lithography for manufacturing future advanced ULSIs. Cell projection techniques are of particular interest, which may make the EB direct writing system practical for
use in ULSI memories with many repeated patterns. However, the proximity effect of such systems disturbs the formation of fine 0.2 µ m level patterns throughout
the patterning area. In order to solve this problem, we have developed an improved proximity effect correction technique suitable for use in a cell projection EB direct
writing system. This technique makes use of smaller cell projection shot ( CPS) size in
the edge region than in the center region in the EB direct writing area with dose compensation between CPSs, based on the self-consistent method. Utilizing this technique,
we can obtain fine 0.2 µ m patterns with 0.02 µ m critical dimension (CD) control patterns, which are required to manufacture 1Gbit dynamic random access memories (DRAMs).
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.33.6953
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1994
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
