In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 33, No. 11B ( 1994-11-01), p. L1574-
Kurzfassung:
Device quality In 0.29 Al 0.71 As and In 0.3 Ga 0.7 As epilayers have been successfully grown on GaAs substrates using a carefully designed In x Al 1- x As multistage strain-relaxed buffer. Cross-sectional transmission electron microscopy has shown that the misfit dislocations are confined in the lower regions of the metamorphic buffer layer. The Hall electron mobility of the modulation doped structure grown on the InAlAs buffer was 6160 and 25379 cm 2 /V· s with sheet carrier densities of 1.9×10 12 and 1.8×10 12 cm -2 at 300 and 77 K, respectively. The excellent characteristics of the field-effect transistors fabricated on this structure have indicated its potential for practical applications.
Materialart:
Online-Ressource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.33.L1574
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
1994
ZDB Id:
218223-3
ZDB Id:
797294-5
ZDB Id:
2006801-3
ZDB Id:
797295-7
