In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 33, No. 12B ( 1994-12-01), p. L1762-
Kurzfassung:
We report the observation of multiple negative differential resistance (NDR) in nanometer-thick metal (CoSi 2 )/insulatro (CaF 2 )
resonant tunneling hot electron transistor (RHET) grown on a silicon substrate. In this transistor, electrons from a resonant tunneling emitter with a 2.2-nm-thick CoSi 2 quantum well are transferred to the
conduction band of a 4.0-nm-thick CaF 2 collector barrier region. Multiple NDR observed here may be attributed
to the modulation of the transmission probability of electron waves due to quantum interference in the conduction band of the insulator (CaF 2 ) collector barrier layer between two metal (CoSi 2 ) layers, which is a different
mechanism from the resonance in quantum wells previously reported.
Materialart:
Online-Ressource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.33.L1762
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
1994
ZDB Id:
218223-3
ZDB Id:
797294-5
ZDB Id:
2006801-3
ZDB Id:
797295-7
