In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 33, No. 3B ( 1994-03-01), p. L402-
Kurzfassung:
The deposition of AlAs x Sb 1- x films is studied systematically using an organometallic vapor phase epitaxy growth technique. It is found that the growth of AlAsSb films requires a low V/III ratio to enhance the incorporation of antimony into the solid. The composition of the alloy also depends strongly on the growth temperature. Experimental data shows that films grown at higher temperatures yield much higher AlSb contents in the AlAs x Sb 1- x alloys. This is contrary to the results reported for GaAsSb films. In our study, we are able to grow metastable AlAs x Sb 1- x epitaxial films throughout the entire range of the solid composition for temperatures above 550° C.
Materialart:
Online-Ressource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.33.L402
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
1994
ZDB Id:
218223-3
ZDB Id:
797294-5
ZDB Id:
2006801-3
ZDB Id:
797295-7
