In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 33, No. 3B ( 1994-03-01), p. L459-
Abstract:
The microwave-plasma-assisted chemical vapor deposition (CVD) of diamond film with ( H 2 +CO+O 2 ) gaseous source revealed increasing net growth rate with O 2 addition up to 0.5%, although the etching rate itself markedly increased with O 2 . To understand the effect of oxygen on CVD, we have proposed a possible model for diamond surface reaction, a modified Harris model [Appl. Phys. Lett. 56 (1990) 2298], by taking into account the forced hydrogen abstraction from the surface structure associated with chemical reaction with OH species. Our model, though still slightly rough, explained to a certain extent the observed increase in the diamond growth rate upon oxygen addition.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.33.L459
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1994
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7