In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 33, No. 5B ( 1994-05-01), p. L751-
Abstract:
Oxygen deficiency in epitaxially grown CeO 2 layers on Si substrates by ultrahigh-vacuum evaporation is studied using secondary ion mass spectrometry (SIMS). 18 O 2 gas is externally introduced in the evaporation process for compensation of oxygen deficiency of the CeO 2 layer. Oxygen components in CeO 2 layers are analyzed, separately detecting secondary ions of Cs 16 O + and Cs 18 O + . The extrinsic oxygen content needed to obtain stoichiometric CeO 2 is determined to be in the range of 11–18%. These SIMS data agree well with the oxygen deficiency of ∼18% determined by Rutherford backscattering analysis of a nonstoichiometric CeO 2 layer grown without oxygen gas introduction.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.33.L751
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1994
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7