In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 33, No. 6B ( 1994-06-01), p. L888-
Abstract:
Metal-insulator-semiconductor (MIS) structures of heavily doped ( 6–7×10 18 cm -3 ) epitaxial diamond were prepared, which include highly polarizable BaTiO 3 insulator films. They were characterized by capacitance-voltage ( C-V ) and electron-beam-induced-current (EBIC) measurements. Despite the presence of background boron of an extremely high concentration, an applied voltage of at most 10 V was sufficient to establish the deep-depletion condition at the diamond surface. The observed EBIC image gave a more direct indication of the efficient field effect in our diamond MIS structures.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.33.L888
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1994
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7