In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 34, No. 2S ( 1995-02-01), p. 1016-
Abstract:
Characteristics of the oxidation barrier layers for copper metallization were investigated. Thin films of Cr, TiN and Al were used as the oxidation barrier layers for Cu. Ultrathin Al film was found to prevent the oxidation of Cu up to the highest annealing temperature (600° C) among the barriers layers tested in this study. Topographical features of Cu\Al film were better than those of Cu\Cr and Cu\TiN after an oxidation annealing treatment. It was found that oxygen did not diffuse into Cu because of the ultrathin Al 2 O 3 layer formed on the Cu surface, and consequently ultra thin (25 Å) Al film could be a good oxidation barrier layer for Cu metallization.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.34.1016
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1995
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7