In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 34, No. 2S ( 1995-02-01), p. 1315-
Abstract:
A novel wire transistor structure with Schottky in-plane gates (IPG) to the AlGaAs/GaAs quantum well (QW) has been successfully fabricated and characterized. An in situ selective electrochemical process is utilized to form direct Schottky contacts to the edge of the QW. Details of the novel process for transistor fabrication, as well as field-effect characteristics of the novel device, are presented and discussed. Field-effect transistor (FET) characteristics with excellent gate control and clear pinch-off are obtained at room temperature and they are compared with a theory newly developed for the IPG FET.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.34.1315
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1995
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
