In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 34, No. 6R ( 1995-06-01), p. 3280-
Abstract:
We measured the temperature dependence of the photothermal signal intensity for undoped and doped GaAs samples using the photothermal divergence method proposed by Saito et al. [Appl. Opt. 31 (1992) 2047]. The temperature dependence of signal intensity and cutoff frequency of the signal agreed with a theoretical prediction and enabled determination of the temperature dependence of the thermal conductivity of the samples.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.34.3280
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1995
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7