In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 34, No. 7R ( 1995-07-01), p. 3543-
Abstract:
An n-ZnSe/p-ZnSe/p + -GaAs blue light emitting diode was prepared by low pressure organometallic chemical vapor deposition. Its electroluminescence wavelength was 461 nm with a full width at half maximum 52 meV at 300 K.
It shows that a pure blue ZnSe light emitting diode can be prepared under Zn-rich growth condition for n-type ZnSe epilayer doped with aluminum and under Se-rich growth condition for p-type ZnSe epilayer doped with nitrogen.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.34.3543
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1995
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
