In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 34, No. 8S ( 1995-08-01), p. 4309-
Kurzfassung:
Device-length dependence of the breakdown of the integer quantum Hall effects is studied by using devices with narrow constricted regions of different lengths L at T =1.5 – 4.2 K and Landau-level filling factors of ν= 2, 4 and 6. Samples are fabricated from GaAs/AlGaAs heterostructures. Sharp increase in the diagonal resistance R x at a critical current disappears, and is replaced by a continuous and gradual increase in short constricted regions of L 〈 30 µm. The observed L -dependence supports an avalanche-type carrier multiplication mechanism triggered by electron-superheating.
Materialart:
Online-Ressource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.34.4309
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
1995
ZDB Id:
218223-3
ZDB Id:
797294-5
ZDB Id:
2006801-3
ZDB Id:
797295-7