In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 34, No. 9R ( 1995-09-01), p. 4658-
Kurzfassung:
Zn x Cd 1- x Se (0≤ x ≤1) films were deposited by two zone hot wall evaporation technique. X-ray diffraction analysis of the films indicated a predominant wurtzite structure for x 〈 0.5, which changed to zinc blende structure for x 〉 0.7. The films had a mixed structure for 0.5 〈 x 〈 0.7. The films were highly resistive (resistivity varying within 3 Ω· cm to 1.5×10 5 Ω· cm for 0≤ x ≤1.0) with partially depleted grains. The optical band gap ( E g ), determined from the reflectance measurements, indicated a direct transition with a bowing effect in E g versus x plot. The conductivity at low temperature (for x 〈 0.6) could be explained by thermionic emission over the intercrystalline barrier, while for higher x quantum mechanical tunneling through the barrier became predominant. The variation of the barrier height ( E bd ) with the intensity of illumination was obtained from the photoconductivity measurements. The majority carrier capture cross-section ( 1-4×10 -18 cm 2 ) of the grain boundary traps ( 1×10 11 -1×10 12 cm -2 ) was determined. The effect of the intercrystalline barrier on the thermoelectric power measurements was also considered.
Materialart:
Online-Ressource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.34.4658
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
1995
ZDB Id:
218223-3
ZDB Id:
797294-5
ZDB Id:
2006801-3
ZDB Id:
797295-7
