In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 34, No. 9R ( 1995-09-01), p. 4945-
Kurzfassung:
Interfacial phenomena in the O 2 -annealed multilayer systems of Pt/Ti/SiO 2 /Si and Pb(Zr, Ti)O 3 /Pt/Ti/SiO 2 /Si have been studied using Auger electron spectroscopy, X-ray diffraction and transmission electron microscopy (TEM). Emphasis has been placed on the microstructural analysis of interfaces. The strong tendency of titanium diffusion into platinum appeared to be responsible for the formation of an isolated platinum layer when the samples were annealed in O 2 for 4 h at 450° C or higher. The formation of a TiO 2 phase was confirmed at the annealing temperature of 600° C or higher. TEM analysis of the 650° C annealed sample confirmed the presence of a Pt-containing layer sandwiched by TiO 2 layers. Rapid thermal annealing is strongly recommended to suppress undesirable interdiffusions and the resultant chemical reactions.
Materialart:
Online-Ressource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.34.4945
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
1995
ZDB Id:
218223-3
ZDB Id:
797294-5
ZDB Id:
2006801-3
ZDB Id:
797295-7
