In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 34, No. 10R ( 1995-10-01), p. 5637-
Abstract:
We report in this paper the photoluminescence (PL) investigation of a partly doped asymmetric coupled quantum well (ACQW) structure. The dependence of non-resonant tunneling rate on excitation power for different Al 0.28 Ga 0.72 As interbarrier thicknesses is studied in detail. The PL intensity from a 20 nm Al 0.2 Ga 0.8 As well is much larger than that from a 5.5 nm Si-doped GaAs well when the interbarrier is thick ( 〉 12 nm). This result indicates that photo excited carriers are preferentially relaxed toward the wide well, which has larger state density than the doped narrow well. The competition among different processes of intersubband relaxations is discussed in connection with the PL spectra.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.34.5637
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1995
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
