In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 34, No. 2S ( 1995-02-01), p. 812-
Abstract:
This paper describes specific features in low-temperature drain current and transconductance characteristics of thin silicon-on-insulator n-channel metal-oxide-semiconductor field effect transistors (SOI nMOSFET's) with a sub-10-nm-thick silicon layer and presents some simple analyses based on quantum mechanics. It is suggested that these features originate from the two-dimensional subband system in the thin SOI layer and its local deviation based on the local-deviated silicon layer thickness reflecting the buried oxide layer surface morphology of high-temperature-annealed SIMOX substrates.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1995
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
