In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 34, No. 2S ( 1995-02-01), p. 921-
Abstract:
As-deposited poly-crystalline silicon (poly-Si) films have been applied to low temperature processed complementary metal oxide semiconductor (CMOS) thin film transistors (TFTs). Continuous two-step deposition of poly-Si films in the infra-low pressure chemical vapor deposition (ILPCVD) reduces the silane partial pressure to 0.10 mTorr to obtain high quality films. The maximum processing temperature of 555° C through the CMOS TFT fabrication is during the poly-Si deposition. Since the as-deposited poly-Si films are good in quality, CMOS static shift registers have been successfully integrated on a glass substrate with the as-deposited poly-Si TFTs.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1995
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
