In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 34, No. 8B ( 1995-08-01), p. L1068-
Abstract:
The emission barrier height of p-type semiconducting diamond has been estimated relatively by comparing the field emission property of a diamond field emitter array (FEA) and a molybdenum (Mo) FEA having the same geometry. Diamond FEA showed lower turn-on voltage than Mo FEA in the emission current-anode voltage characteristics. The slope ratio of diamond FEA to Mo FEA in Fowler-Nordheim (F-N) plots yielded the emission barrier height ratio of the diamond to Mo as 0.44 ±0.06. From the obtained ratio, the emission barrier height of the diamond can be estimated to be 1.87 ±0.26 eV when the work function of Mo (4.24 eV) is assumed.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.34.L1068
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1995
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7