In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 34, No. 4B ( 1995-04-01), p. L469-
Abstract:
A new type of CuPt ordered-phase (CuPt-A) with orientation in the [111]A and [1̄1̄1] A directions was found in Al 0.5 In 0.5 P grown at 520° C on exact (001)GaAs substrate by gas-source molecular-beam epitaxy. Weak formation of conventional CuPt-B type ordered phase was also observed in the same AlInP layer. The surface reconstruction observed by RHEED during the growth was (2×2). At a growth temperature of 560° C the surface reconstruction was (2×1) and only conventional CuPt-B was formed. A step array parallel to [1̄10] and descending towards [110] was found to promote formation of the CuPt [111]A variant.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.34.L469
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1995
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
