In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 34, No. 5A ( 1995-05-01), p. L573-
Kurzfassung:
Effect of electron beam irradiation (15 kV) on Si surface cleaning prior to epitaxial growth in an ultrahigh-vacuum system was investigated. A CaF2 film was epitaxially grown on the Si surface, and the interface was observed by high-voltage electron microscopy. Amorphous layers, which were observed in the interface prepared with conventional thermal treatment at 750°C, became much smaller with electron beam irradiation after the thermal treatment. Based on the electron microscope observation, the effect of electron beam irradiation on Si surface cleaning was briefly discussed.
Materialart:
Online-Ressource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.34.L573
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
1995
ZDB Id:
218223-3
ZDB Id:
797294-5
ZDB Id:
2006801-3
ZDB Id:
797295-7