In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 34, No. 8A ( 1995-08-01), p. L968-
Abstract:
High-quality oxide of InP having an excellent interface with InP was successfully grown with magnetically excited plasma oxidation of InP and annealing at 260°C for 15 min in \morO ambient. Outstanding capacitance-voltage (C-V) characteristics were obtained, which clearly showed both inversion and accumulation behaviors. The C-V curves at 300 K and 80 K coincided well with each other, indicating the absence of frequency dispersion. X-ray photoelectron spectroscopic measurements showed that InPO 4 , the perfect oxide of InP, was the dominant component species in the oxide with a small amount of In 2 O 3 .
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.34.L968
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1995
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
