In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 35, No. 2S ( 1996-02-01), p. 1205-
Abstract:
The surface stoichiometry and reconstruction of GaP (001) are investigated by means of reflection high-energy electron diffraction and surface photo-absorption. The experiments were carried out using a solid-source molecular beam epitaxy system with a cracker cell as a P source. When the amount of Ga supplied to the surface is over 2 monolayer (ML), the 2×4 reconstruction corresponding to the P-stabilized surface is observed in spite of the existence of excess Ga on the surface. The change of surface reconstruction may be interpreted as follows: the surface is a Ga-terminated structure up to 2 ML of Ga supply, then Ga atoms move to some nonperiodic sites such as Ga droplets.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.35.1205
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1996
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7