In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 35, No. 2S ( 1996-02-01), p. 1302-
Abstract:
We have investigated the influence of type-I to type-II transition by an applied electric field on photoluminescence and carrier transport by time-of-flight experiments in GaAs/AlAs short-period superlattices. Type-I to type-II transition was confirmed by observing degenerated photoluminescence spectra caused by Γ- X mixing. The rise time of the time-resolved photocurrent was found to increase by the type-I to type-II transition. This result clearly shows that the tunneling time through type-II alignment is longer than that through type-I alignment. The delayed carrier transport is most likely caused by Γ- X -Γ transfer. The results suggest that in type-II superlattices, carriers prefer Γ- X -Γ transfer to Γ-Γ sequential tunneling.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.35.1302
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1996
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7