In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 35, No. 3R ( 1996-03-01), p. 1779-
Kurzfassung:
AlInAs/InGaAs metal-semiconductor-metal (MSM) photodetectors with a low dark current density are fabricated using a surface modification process with phosphine (PH 3 ) plasma. Phosphidization of the AlInAs cap layer reduces the surface state density and allows formation of high Schottky barrier with a tunnel metal-insulator-semiconductor (MIS) structure. A dark current density as low as 0.021 pA/µm 2 at 10 V is obtained.
Materialart:
Online-Ressource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.35.1779
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
1996
ZDB Id:
218223-3
ZDB Id:
797294-5
ZDB Id:
2006801-3
ZDB Id:
797295-7