In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 35, No. 7R ( 1996-07-01), p. 4096-
Abstract:
The thermally assisted photoscission model has been formulated to explain the photobleaching of polysilane films due to the photoinduced annihilation of σ bonds. In the model, σ bonds are photoexcited and then scissored with thermal assistance, and the photobleaching by means of a prolonged exposure to ultraviolet light leads to the formation of a sponge-like structure. The model predicts that (i) the decay of the photon flux absorbed in the films after t T , defined as the time when the transmittance of the films begins to increase significantly, obeys a power law with an exponent of γ= k T / ε 0 , where ε 0 is the exponential width of the activation-energy distribution and k T is the thermal energy; (ii) t T is inversely proportional to the incident photon flux and obeys a power law against the film thickness with an exponent of 1/γ; and (iii) the temperature dependence of t T provides the cross section of the photoexcitation of σ bonds C r . It has been confirmed that these predictions are fairly consistent with the experimental results. The parameters of ε 0 and C r for the photobleaching of poly(methylphenylsilane) films by 325 nm light have also been estimated to be 28 meV and 1.1×10 -16 cm 2 , respectively.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.35.4096
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1996
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
