In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 35, No. 9S ( 1996-09-01), p. 5012-
Kurzfassung:
We have developed a diaphragm piezoelectric microactuator. The diaphragm consists of a
Pb(Zr, Ti)O 3 (PZT) thin film, electrode layers, an isolation layer and a Si substrate. The diaphragm
is deflected by transverse stress in the PZT thin film which is fabricated by a sputtering and annealing process. The PZT thin film has a piezoelectric coefficient d 31 of -100 pC/N, which is
comparable to that of bulk PZT. A diaphragm deflection of 3 µ m was obtained at an electric field of 16 V/µm.
Materialart:
Online-Ressource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.35.5012
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
1996
ZDB Id:
218223-3
ZDB Id:
797294-5
ZDB Id:
2006801-3
ZDB Id:
797295-7
