In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 35, No. 11R ( 1996-11-01), p. 5805-
Abstract:
Two-inch-diameter CeO 2 films on R-plane (1*BAR*1*BAR*02) sapphire substrates have been prepared using an on-axis rf magnetron sputtering method. The effects of postannealing treatment, sputtering gas pressure and substrate temperature on the orientation, crystallinity and surface morphology of the CeO 2 films have been investigated. The (100)-preferred CeO 2 films with high crystallinity are grown at 820° C and 0.15 Torr and have a full width at half-maximum value of the rocking curve of (200) planes of 0.15°. The spatial variation of thickness of the CeO 2 films across the 2-inch substrate is about 5.8%. The c -axis oriented YBa 2 Cu 3 O x (YBCO) films grown on sapphire substrates with a (100)-preferred CeO 2 buffer layer of 100 nm are made. The YBCO films have superconducting properties with the T c being 88–90 K and J c (77 K, 0 T) being (1–3)×10 6 A/cm 2 .
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.35.5805
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1996
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
