In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 35, No. 11R ( 1996-11-01), p. 5811-
Kurzfassung:
By changing the polarity of charged trap sites, we investigated the stability of densely contact-electrified charges on thin silicon oxide in air using a modified atomic force microscope. For usual silicon oxides with positively charged trap sites, a stable state is obtained only for negative charge deposition, while for modified silicon oxides with negatively charged trap sites, a stable state is obtained only for positive charge deposition. As a result, we concluded that charged trap sites make densely contact-electrified charges with the same polarity unstable due to the strong Coulomb repulsive force.
Materialart:
Online-Ressource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.35.5811
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
1996
ZDB Id:
218223-3
ZDB Id:
797294-5
ZDB Id:
2006801-3
ZDB Id:
797295-7