In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 35, No. 12R ( 1996-12-01), p. 6017-
Kurzfassung:
We improved the method previously used to determine the lattice constants and misorientation of GaAs/Si by recording the patterns of X-ray (004) and (220) reflections. The (220) reflection was measured from the (110) cross section of a GaAs/Si epilayer. The structural properties of the GaAs/Si epilayers grown by metal-organic chemical-vapor deposition (MOCVD) using an ultrathin a-Si buffer layer were investigated. The rotation angle of GaAs/Si epilayers grown by MOCVD using an a-Si buffer layer is very small and the lattice constants of these GaAs/Si epilayers agree quite well with elastic theory.
Materialart:
Online-Ressource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.35.6017
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
1996
ZDB Id:
218223-3
ZDB Id:
797294-5
ZDB Id:
2006801-3
ZDB Id:
797295-7
