In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 35, No. 12S ( 1996-12-01), p. 6506-
Kurzfassung:
We report on sub-0.1 µm electron-beam (EB) lithography using a new chemically amplified positive resist with a stabilizing additive. Diphenylamine (DPA) was incorporated into the resist formulation as a stabilizing additive. DPA improves the post-exposure delay (PED) stability. Even after a PED of 60 min in a clean-room atmosphere (NH 3 concentration ∼20 ppb), no insoluble surface layer was observed for the resist with DPA. High sensitivity and resolution could be achieved by optimizing process conditions such as baking and developer. 0.1 µm lines-and-spaces ( L / S ) patterns and 0.08 µm hole patterns were obtained using a 50 kV variably shaped beam EB system. The practical sensitivity was 6 µC/cm 2 for L / S patterns. Our resist system also shows good performance as an etching mask. A 0.1 µm diameter hole which was 0.5 µm etched in silicon oxide using a 0.5 µm thick resist could be obtained in this experiment.
Materialart:
Online-Ressource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.35.6506
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
1996
ZDB Id:
218223-3
ZDB Id:
797294-5
ZDB Id:
2006801-3
ZDB Id:
797295-7
