In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 35, No. 12S ( 1996-12-01), p. 6521-
Abstract:
In SiO 2 /Si selective etching processes using fluorocarbon plasmas, surface reactions of fluorocarbon radicals can affect the etching selectivity considerably. Therefore, information on radicals in plasmas and their surface reactions must be obtained. We developed an in-situ method of measuring various radicals in plasmas using infrared diode laser absorption spectroscopy (IRLAS) and have clarified the behaviors of the CF x ( x =1–3) radicals in fluorocarbon plasmas for the first time. Moreover, we recently developed techniques of radical injection into plasma (RIT) and clarified the important radical in the plasma etching process. It is expected that these advances will contribute to the further developments in the semiconductor process field.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.35.6521
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1996
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
