In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 35, No. 2S ( 1996-02-01), p. 869-
Abstract:
Measurements of alpha-particle-induced charge collection efficiency (CCE) together with simulation analysis have been carried out for several types of substrates: a double well, a p-well in a p - epitaxial layer grown on p + substrate (epi-substrate) and a p-well with a buried defect layer. As a result, the following have been clarified. CCE for the double well is low because the bottom n-layer acts as an effective electron absorber. CCE for the p-well in the epi-substrate increases with increase in the thickness of the epilayer because the potential difference between the heavily doped substrate and the lightly doped epilayer forms a barrier which prevents electrons from traveling into the substrate. Even for the p-well in a thin epilayer, CCE is comparable to that for the p-well in the conventional p - substrate. CCE for the p-well with a buried defect layer formed by high-energy and high-dosage ion implantation is as low as CCE for the double well because the carrier lifetime is short in the buried layer due to lattice defects.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1996
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
