In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 35, No. 2S ( 1996-02-01), p. 969-
Abstract:
A new thin-SOI process is proposed. This process is classified as a single etch-stop method. It uses an etch-stopped layer as an active layer by decreasing boron concentration in the etch-stopped layer so that an epitaxial layer is not needed. The boron concentration in the 500-nm-thick p + layer after etch-stopping is decreased from 7×10 19 cm -3 to less than 2×10 17 cm -3 by hydrogen annealing at 1100°C for 3 h. Additionally, surface roughness is decreased from 2.3 nm to about 0.2 nm. This value is almost equivalent to a polished wafer roughness. This process is simple and does not require complicated equipment, thus allowing for the manufacture of a low-cost SOIs.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1996
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
