In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 35, No. 8B ( 1996-08-01), p. L1047-
Abstract:
It is shown that hydrogen-radical postannealing of SiO 2 on Si wafers can result in high effective lifetime (τ eff ), low surface recombination velocity ( S eff ) and low midgap interface state density at the SiO 2 /Si interface ( D ito ). The annealing effect appeared above 200° C within a very short annealing time to a greater degree than in 3% H 2 forming gas annealing at 400° C. This annealing method is suitable for the surface passivation process of solar cell devices.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.35.L1047
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1996
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
