In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 35, No. 9A ( 1996-09-01), p. L1111-
Abstract:
The hydrogenation time dependence of hydrogenation effects on the performance of a-SiC:H-based p-i-n thin film light-emitting diodes (TFLEDs) in the visible range has been investigated. It was found that hydrogenation markedly improved the device performance, and that increasing the hydrogenation time beyond a saturation point degraded the device performance; that is, as compared with the performance of a TFLED hydrogenated for a short time (∼15 min), the threshold voltage increased slightly, the EL peak shifted towards a longer wavelength, and the brightness decreased. In particular, after hydrogenation for 45 min, the brightness decreased to 15 cd/m 2 .
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.35.L1111
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1996
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7