In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 35, No. 3B ( 1996-03-01), p. L362-
Abstract:
InAs submonolayers grown on tilted (001) GaAs substrates by gas source migration enhanced epitaxy are studied by plan-view scanning tunneling microscopy and scanning tunneling spectroscopy. Two contrasting areas are observed on the terrace. The bright stripe (InAs area) width is observed to increase with the amount of In supplied during growth. The difference between the contrasting areas is also observed in the I-V curve; the slope d I /d V is dependent on the bright and dark areas and shows the same values in each area, although the onset voltage for the current rise is the same in both InAs and GaAs regions.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.35.L362
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1996
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7