In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 35, No. 1A ( 1996-01-01), p. L4-
Abstract:
Oxide films of InP with good electrical characteristics and of sufficient thickness were obtained using magnetically excited plasma oxidation with Ar + O 2 mixed gas as an oxidant or with substrate heating to 200°C. These oxides were grown in helicon-wave-excited plasma. Both Ar mixing and substrate heating strongly enhanced the growth rate of the oxide film. However, the capacitance-voltage ( C-V ) characteristics of these oxides were not always good. The oxides grown in inductively coupled plasma, on the other hand, showed excellent C-V characteristics.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1996
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
