In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 35, No. 6A ( 1996-06-01), p. L719-
Abstract:
Sr m -3 Bi 4 Ti m O 3 m +3 ( m =4, 5, 6) thin films were grown on (100)MgO and (100)Pt/(100)MgO substrates by the pulsed laser deposition (PLD) method. X-ray diffraction (XRD) revealed c -axis-oriented crystal growth of each Sr m -3 Bi 4 Ti m O 3 m +3 film. Reflection high-energy electron diffraction (RHEED) from the films showed a streak pattern which indicates the epitaxial ordering of the fabricated thin films. Fundamental optical absorption of SrBi 4 Ti 4 O 15 , Sr 2 Bi 4 Ti 5 O 18 and Sr 3 Bi 4 Ti 6 O 21 films started at 3.4, 3.5 and 3.7 eV, respectively. Moreover, the Fourier transform infrared (FTIR) spectra also revealed a systematic change in their LO-phonon absorption dip structure.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.35.L719
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1996
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7