In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 36, No. 3R ( 1997-03-01), p. 1238-
Abstract:
Diamond thin films were deposited on p-type Si(100) wafers by microwave plasma enhanced chemical vapor deposition (MPECVD) using mixtures of H 2 , CH 4 and O 2 gases. Deposition was carried out at a substrate temperature of 900°C and a pressure of 40 Torr. In order to examine the effect of pretreatment on the film formation, SiC and diamond powders were used as pretreatment powders. Also, the methane gas ratio in the gas mixture was varied to observe its effect on the crystal structure of diamond films. Furthermore, the substrate bias effect on the diamond film formation was examined. Scanning electron microscopy (SEM), transmission electron microscopy (TEM) and Raman spectroscopy were utilized to characterize the microstructures of diamond thin films. The highest nucleus density was obtained by pretreatment with diamond powders of 40mbox-60 µm in size and a negative bias potential to the substrates. The deposited diamond films were found to contain many defects. The density of the defects increased with CH 4 concentration in the gas mixtures. It is believed that the gas mixture with a high CH 4 ratio must have promoted the formation of a graphite phase, probably due to the insufficient amount of atomic hydrogen acting as a selective etchant for graphite. Diamond films with good quality and a nucleus density of 10 8 /cm 2 could be deposited by utilizing the combined effects of a negative bias potential and a magnetic field.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.36.1238
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1997
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
