In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 36, No. 3S ( 1997-03-01), p. 1389-
Kurzfassung:
N-channel and p-channel metal-oxide-semiconductor (MOS) thin-film transistors (TFT's) have been fabricated on rapid thermal chemical vapor deposition (RTCVD) polycrystalline silicon-germanium (poly- Si 0.88 Ge 0.12 ) films by a low temperature (≤550° C) process. These devices employ in-situ n + doped poly- Si 0.65 Ge 0.35 films as gate electrodes to reduce the process time and temperature, dual-offset spacers to reduce the electric field in the drain junction region, and silicon capping layers to protect the poly-Si 1- x Ge x films against oxygen. The I d - V g characteristics in n-channel TFT's, as well as in p-channel TFT's, exhibit good behavior after remote-PECVD hydrogenation. Further improvements on electrical properties in n-channel TFT's are limited by trap-inducing G e behaviors in poly-Si 1- x Ge x films.
Materialart:
Online-Ressource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.36.1389
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
1997
ZDB Id:
218223-3
ZDB Id:
797294-5
ZDB Id:
2006801-3
ZDB Id:
797295-7